SiC, GaN and power devices
Threshold voltage, leakage, conduction behavior, TID pre-stress and selected coupled-stress studies.
DEVICE PROGRAMS
X-ray TID addresses cumulative ionizing effects. It does not reproduce the complete space environment or replace SEE, proton, neutron-displacement or heavy-ion testing.

PROGRAM MATRIX
A device category is only the starting point. Bias state, operating mode, temperature, measurement timing and acceptance logic determine the useful test matrix.
Threshold voltage, leakage, conduction behavior, TID pre-stress and selected coupled-stress studies.
Functional state, interfaces, timing, configuration retention and system-level behavior.
Data retention, read/write stability, error behavior and recovery characteristics.
Dark current, noise, defect growth, response uniformity and imaging performance.
Output stability, conversion efficiency, protection behavior and parameter drift.
Research-oriented evaluation across wafer, bare-die, packaged-device and module levels.
PROJECT INTAKE
Share a non-sensitive device category, test objective, target dose, bias conditions and schedule. We will route the request to the appropriate specialist.